Fabrication of quantum wires and dots on
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T. Takebe; T. Watanabe; K. Fujita
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Article
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1998
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Elsevier Science
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English
β 195 KB
Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridgetype triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [