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Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric

✍ Scribed by Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Wong, Man; Kwok, Hoi Sing

Book ID: 121812126
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 700 KB
Volume: 548
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2013.09.020

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