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Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature

✍ Scribed by Ji-Hong Kim; Jae-Won Kim; Ji-Hyung Roh; Kyung-Ju Lee; Kang-Min Do; Ju-Hong Shin; Sang-Mo Koo; Byung-Moo Moon

No coin nor oath required. For personal study only.

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