Low-voltage ZnO thin-film transistors operating at 2.0 V gated with mesoporous SiO2 dielectric processed at room-temperature

✍ Scribed by Y. Hu; A.X. Lu; L.P. Wang; H.C. Yu; Q. Wan

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 396 KB
• Volume: 42
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2009.09.019