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High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric

✍ Scribed by Rongsheng Chen; Wei Zhou; Meng Zhang; Hoi Sing Kwok


Book ID
116943630
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
425 KB
Volume
520
Category
Article
ISSN
0040-6090

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## Abstract The performance of top‐gate thin film transistors with solution processed zinc oxide (ZnO) channel layer and poly(4‐vinylphenol) (PVP) gate dielectric have been investigated. The transparency of the PVP film was more than 80% in the visible region, indicating that PVP can be used as a p