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Improvements in the device characteristics of IZO-based transparent thin-film transistors with co-sputtered HfO2–Al2O3 gate dielectrics

✍ Scribed by Heegeun Son; Jeongsoo Kim; Jungil Yang; Dongkyu Cho; Moonsuk Yi


Book ID
113514062
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
464 KB
Volume
11
Category
Article
ISSN
1567-1739

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