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Selectivity and Si-load in deep trench etching

✍ Scribed by K. Paul Mu¨ller; Klaus Roithner; Hans-Jo¨rg Timme


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
508 KB
Volume
27
Category
Article
ISSN
0167-9317

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Plasma etching of silicon trenches in a wide range of aspect ratios is studied theoretically and experimentally. A generalized relationship between the process parameters and trench geometry is derived and is verified by reactive ion etching of silicon structures in SF6/O 2 plasma. It is shown that