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Selective dry etching of (Sc2O3)x(Ga2O3)1−xgate dielectrics and surface passivation films on GaN

✍ Scribed by M. Hlad; L. Voss; B. P. Gila; C. R. Abernathy; S. J. Pearton; F. Ren

Book ID: 107453630
Publisher: Springer US
Year: 2006
Tongue: English
Weight: 134 KB
Volume: 35
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-006-0120-2

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