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Preparation and characterization of Ga2xIn2(1−x)O3 films deposited on ZrO2 (1 0 0) substrates by MOCVD

✍ Scribed by Lingyi Kong; Jin Ma; Fan Yang; Caina Luan; Zhen Zhu


Book ID
116606360
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
669 KB
Volume
499
Category
Article
ISSN
0925-8388

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✍ Caina Luan; Jin Ma; Zhen Zhu; Lingyi Kong; Qiaoqun Yu 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 322 KB

Tin oxide (SnO 2 ) epitaxial thin films have been prepared on TiO 2 (0 0 1) substrates at different temperatures by metalorganic chemical vapor deposition (MOCVD) method. The obtained films were pure SnO 2 with the tetragonal rutile structure. An in-plane orientation relationship of (0 0 1) SnO 2 :(