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Segregation control in horizontal Bridgman crystal growth

✍ Scribed by Y. Tao; S. Kou

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
181 KB
Volume
165
Category
Article
ISSN
0022-0248

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## Horizontal Bridgman Growth of GaAs Single Crystals I n order to meet requireinents for the preparation of low dislocation deiisity GaAs single crystals a horizontal Britlginan t.ypc apparatus was designed. Construction of the apparatus allows the estithlishtiient of enhanced teiiiperature stabi

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The experiinriital investigation of the boat shape aiid boat position in the furnace in the case of unseeded horizontal Bridgnian growth of GaAs single crystals was carried out. The relation bctwecn axial and radial temperature gradients in the furnace was also studictl. On the basis of experimental