Horizontal bridgman growth of gaas single crystals

✍ Scribed by Dr. F. Moravec; M. Pelikán

• Publisher: John Wiley and Sons
• Year: 1985
• Tongue: English
• Weight: 367 KB
• Volume: 20
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170200106

✦ Synopsis

Horizontal Bridgman Growth of GaAs Single Crystals

I n order to meet requireinents for the preparation of low dislocation deiisity GaAs single crystals a horizontal Britlginan t.ypc apparatus was designed. Construction of the apparatus allows the estithlishtiient of enhanced teiiiperature stability of the arsenic source and hence better stability of thr arsenic: vapour pressure during the growth. This effw*t was achieved without application of heat pipes which are nsually u s e d for tho improvc:in~:nt of thertiial profile ant1 trnipeIature stability. The influcncr of differeiit arsenic vnpour press u r w on the cltinsity of dislocations was confiimit~i in the course of this work.

Fur die Zuchtung versetzirngsarrrier GaAs-Einkristalle WUI de eine horizontale Bridgriian Apparatur entwickelt. Die Konstruktion tier Apparatur erniiiglicht c,ine hohere Tei~ipcra- turstabilitiit der As-Quelle untl damit einen stabilercn As-Dampfdrurk wilhreiitl tles Wachsttuiis. Dieser Effekt wurde ol-ine Einsatz eines Wilrriicrohreszur Eiiistellurig cles Tetii~er~t.urprofiles imd der Stabilitaterzielt. Der EinfluO J e s As-Dampftlruckr~s anf tlic: VI.rsetziurgstlichte wurdt, untwsucht.