## Horizontal Bridgman Growth of GaAs Single Crystals I n order to meet requireinents for the preparation of low dislocation deiisity GaAs single crystals a horizontal Britlginan t.ypc apparatus was designed. Construction of the apparatus allows the estithlishtiient of enhanced teiiiperature stabi
Bridgman growth of langasite-type piezoelectric crystals
β Scribed by Anhua Wu
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 153 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Three langasite family crystals of Sr 3 Ga 2 Ge 4 O 14 (SGG), Ca 3 NbGa 3 Si 2 O 14 (CNGS), and Sr 3 NbGa 3 Si 2 O 14 (SNGS) were successfully grown by the modified Bridgman method. Among them, SGG crystals up to 2 inches were obtained with the multi-crucible industrial Bridgman furnace; SNGS crystal grown in any orientation direction other than along a-axis was realized. Commercially availability SGG boules and the advantage in SNGS crystal indicated that the modified Bridgman technique is a prospective method to realize the mass-production of the langasite-type crystals.
π SIMILAR VOLUMES
Bridgman growth of Nd:SGG (Sr 3 Ga 2 Ge 4 O 14 ) crystals has been investigated for the first time. Pt crucible of Γ25mmΓ250mm with a seed well of Γ10mmΓ80 mm is used, and seed is SGG crystal of Γ10mmΓ50mm grown by Bridgman method in advance. The growth parameters are optimized as the furnace temper