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Growth of Nd:Sr3Ga2Ge4O14 crystals by a modified Bridgman method

✍ Scribed by Anhua Wu; Jiaxuan Ding; Jiayue Xu; Xinhua Li

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
250 KB
Volume
42
Category
Article
ISSN
0232-1300

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✦ Synopsis

Bridgman growth of Nd:SGG (Sr 3 Ga 2 Ge 4 O 14 ) crystals has been investigated for the first time. Pt crucible of Ø25mmΓ—250mm with a seed well of Ø10mmΓ—80 mm is used, and seed is SGG crystal of Ø10mmΓ—50mm grown by Bridgman method in advance. The growth parameters are optimized as the furnace temperature is set to 1450~1500Β°C, temperature gradient in the crystal-melt interface is less than 25 K/cm and growth rate is less than 0.5mm/h. The Nd:SGG crystals with 25mm in diameter and 60mm in length are grown successfully from 1.5 to 8at% Nd 3+ doped stoichiometric Sr 3 Ga 2 Ge 4 O 14 melt. The distribution coefficient and concentration of Nd 3+ in Nd:SGG crystals are obviously higher than those of Nd:YAG crystal.

πŸ“œ SIMILAR VOLUMES

Efficient 1.35 Β΅m laser emission of Nd-d
Efficient 1.35 Β΅m laser emission of Nd-doped Sr3Ga2Ge4O14 under in-band pumping with diode lasers
✍ B. Liu; Y.L. Li; H.L. Jiang πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 93 KB

We describe the output performances of the 1.35 ΞΌm 4 F 3/2 β†’ 4 I 13/2 transition in Nd-doped Sr3Ga2Ge4O14 (SGG) under in-band pumping with diode lasers at the 879 nm wavelength, directly into the 4 F 3/2 emitting level. An end-pumped Nd:SGG crystal yielded 7.1 W of continuous-wave (CW) output power