Efficient 1.35 µm laser emission of Nd-doped Sr3Ga2Ge4O14 under in-band pumping with diode lasers

✍ Scribed by B. Liu; Y.L. Li; H.L. Jiang

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 93 KB
• Volume: 8
• Category: Article
• ISSN: 1612-2011
• DOI: 10.1002/lapl.201110030

✦ Synopsis

We describe the output performances of the 1.35 μm 4 F 3/2 → 4 I 13/2 transition in Nd-doped Sr3Ga2Ge4O14 (SGG) under in-band pumping with diode lasers at the 879 nm wavelength, directly into the 4 F 3/2 emitting level. An end-pumped Nd:SGG crystal yielded 7.1 W of continuous-wave (CW) output power for 17.7 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 47.7%. To the best of our knowledge this is the first demonstration of such a laser system. Comparative results obtained for the pump with diode laser at 806 nm, into the highly-absorbing 4 F 5/2 level, are given in order to prove the advantages of the in-band pumping. Output power at 1.35 μm, W 0 1 2 3 4 5 6 7 8 22 20 18 16 14 12 10 8 6 4 2 0 Absorbed pump power, W 806 nm 879 nm η sa = 47.7% η sa = 38.

5%

(a) (b) Output power at 1.35 μm versus the absorbed pump power