Efficient 1.34-μm laser emission of Nd-doped vanadates under in-band pumping with diode lasers

✍ Scribed by N. Pavel; T. Dascalu; N. Vasile; V. Lupei

• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 110 KB
• Volume: 6
• Category: Article
• ISSN: 1612-2011
• DOI: 10.1002/lapl.200810099

✦ Synopsis

We describe the output performances of the 1.34-μm 4 F 3/2 → 4 I 13/2 transition in Nd-doped vanadates under in-band pumping with diode lasers at the 0.88-μm wavelength, directly into the 4 F 3/2 emitting level. An end-pumped Nd:YVO 4 crystal yielded 3.4 W of continuous-wave (CW) output power for 9.3 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 0.43. To the best of our knowledge this is the first demonstration of such a laser system. Comparative results obtained for the pump with diode laser at 0.81 μm, into the highly-absorbing 4 F 5/2 level, are given in order to prove the advantages of the in-band pumping. Output power at 1.34 μm, W 2 3 4 5 6 1 0 15 10 5 0 Absorbed pump power, W η sa = 0.39 η sa = 0.43 λ p = 808 nm λ p = 880 nm linear fit 0.4-at.% Nd:YVO 4

Output power at 1.34 μm versus the absorbed pump power for the 0.4-at.% Nd:YVO4 crystal, output mirror with T = 0.04