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Growth of CdGeAs2 single crystals by a microprocessor-controlled bridgman system

โœ Scribed by M. Manimaran; P. Ramasamy

Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
201 KB
Volume
30
Category
Article
ISSN
0232-1300

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๐Ÿ“œ SIMILAR VOLUMES

Growth of Nd:Sr3Ga2Ge4O14 crystals by a
Growth of Nd:Sr3Ga2Ge4O14 crystals by a modified Bridgman method
โœ Anhua Wu; Jiaxuan Ding; Jiayue Xu; Xinhua Li ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 250 KB

Bridgman growth of Nd:SGG (Sr 3 Ga 2 Ge 4 O 14 ) crystals has been investigated for the first time. Pt crucible of ร˜25mmร—250mm with a seed well of ร˜10mmร—80 mm is used, and seed is SGG crystal of ร˜10mmร—50mm grown by Bridgman method in advance. The growth parameters are optimized as the furnace temper