## Horizontal Bridgman Growth of GaAs Single Crystals I n order to meet requireinents for the preparation of low dislocation deiisity GaAs single crystals a horizontal Britlginan t.ypc apparatus was designed. Construction of the apparatus allows the estithlishtiient of enhanced teiiiperature stabi
Influence of temperature conditions in horizontal Bridgman furnace on crystal growth of GaAs
✍ Scribed by Dr. F. Moravec; B. Štěpánek
- Publisher
- John Wiley and Sons
- Year
- 1987
- Tongue
- English
- Weight
- 339 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
✦ Synopsis
The experiinriital investigation of the boat shape aiid boat position in the furnace in the case of unseeded horizontal Bridgnian growth of GaAs single crystals was carried out. The relation bctwecn axial and radial temperature gradients in the furnace was also studictl. On the basis of experimental results the optimum conditions for the growth of low tlislocation drnsity GaAs single crystals were derived.
Der Einflufi von Form und Stellung d r s Schiffchens in1 Ofeii auf das Wachstuni VCIII GaAs-Kristallcw niit Hilfe des horizontalen Bridgman-Verfahrens ohne Kristallisatiorlskrini wurdc exporiinentell untersurht. Gleichzeitig erfolgte das Studiuiii der Bezichmigfm zwischen axialen und radialen Temperaturgradienten in1 Ofen. Auf der Grundlagc tier experiiurntrllen Ergebnissc wurden dic optimalen Bedingungen f u r tlas 'Il'uc~hst11111 von GaAs-Kristalkn init geringun Versetzungsdichtcn abgeleitrt.
📜 SIMILAR VOLUMES
## Abstract Transparent ZnO crystals were obtained by the flux Bridgman method from high temperature solution of 22 mol% ZnO‐78 mol% PbF~2~ system. The influence of annealing temperatures on the photoluminescence (PL) of ZnO crystal was investigated. An ultraviolet emission peak at about 379 nm was
A. Georgakilas 1 ) (a, b), M. Androulidaki (a), K. Tsagaraki (a), K. Amimer (a), G. Constantinidis (a), N.T. Pelekanos (c), M. Calamiotou (d), Zs. Czigany (e), and B. Pecz (e)