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Single crystal growth of CuInSe2 by selenization horizontal Bridgman method

✍ Scribed by Hiroaki Matsushita; Takeo Takizawa


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
483 KB
Volume
160
Category
Article
ISSN
0022-0248

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Horizontal bridgman growth of gaas singl
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## Horizontal Bridgman Growth of GaAs Single Crystals I n order to meet requireinents for the preparation of low dislocation deiisity GaAs single crystals a horizontal Britlginan t.ypc apparatus was designed. Construction of the apparatus allows the estithlishtiient of enhanced teiiiperature stabi