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Schottky diodes on Si1−x−yGexCy alloys: effect of the C-incorporation

✍ Scribed by M. Mamor; F. Meyer; D. Bouchier; G. Vialaret; E. Finkman; S. Bodnar; J.L. Regolini


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
342 KB
Volume
102
Category
Article
ISSN
0169-4332

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Nickel-silicided/Si 1Àx Ge x Schottky junctions are fabricated by annealing the deposited nickel (Ni) film on relaxed Si 0.75 Ge 0.25 layer at a temperature range of 300-900 1C for 60 s. Energy dispersive spectroscopy (EDS) was used to quantify the Ge composition in silicide/germanosilicide grains,