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Schottky barrier properties of various metals on n-type GaN

✍ Scribed by Schmitz, A C; Ping, A T; Khan, M Asif; Chen, Q; Yang, J W; Adesida, I

Book ID
124060691
Publisher
Institute of Physics
Year
1996
Tongue
English
Weight
97 KB
Volume
11
Category
Article
ISSN
0268-1242

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## Abstract Thermal annealing effects on the electrical and structural properties of Ni/Mo Schottky contacts on n‐type GaN have been investigated by current–voltage (__I–V__), capacitance–voltage (__C–V__), Secondary ion mass spectrometer (SIMS), and X‐ray diffraction (XRD) techniques. The extracte