## Abstract The effects of rapid thermal annealing on the electrical and structural properties of Pd/Au Schottky contacts to n‐type InP(111) have been investigated by current–voltage (__I__ –__V__), capacitance–voltage (__C__ –__V__) and X‐ray diffraction (XRD) measurements. The barrier height of t
✦ LIBER ✦
Thermal annealing behaviour on Schottky barrier parameters and structural properties of Au contacts to n-type GaN
✍ Scribed by K. Jagadeswara Reddy; Varra Rajagopal Reddy; P. Narasimha Reddy
- Publisher
- Springer US
- Year
- 2007
- Tongue
- English
- Weight
- 598 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0957-4522
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Rapid thermal annealing effects on elect
✍
Reddy, M. Bhaskar ;Janardhanam, V. ;Kumar, A. Ashok ;Reddy, V. Rajagopal ;Reddy,
📂
Article
📅
2009
🏛
John Wiley and Sons
🌐
English
⚖ 491 KB
Effects of thermal annealing on the elec
✍
Varra Rajagopal Reddy; M. Ravinandan; P. Koteswara Rao; Chel-Jong Choi
📂
Article
📅
2008
🏛
Springer US
🌐
English
⚖ 665 KB
The influence of rapid thermal annealing
✍
M. Bhaskar Reddy; V. Janardhanam; A. Ashok Kumar; V. Rajagopal Reddy; P. Narasim
📂
Article
📅
2009
🏛
Springer US
🌐
English
⚖ 854 KB
Structural and electrical properties of
✍
Jyothi, I. ;Reddy, V. Rajagopal ;Reddy, M. Siva Pratap ;Choi, Chel-Jong ;Bae, Jo
📂
Article
📅
2010
🏛
John Wiley and Sons
🌐
English
⚖ 564 KB
## Abstract Thermal annealing effects on the electrical and structural properties of Ni/Mo Schottky contacts on n‐type GaN have been investigated by current–voltage (__I–V__), capacitance–voltage (__C–V__), Secondary ion mass spectrometer (SIMS), and X‐ray diffraction (XRD) techniques. The extracte
Electrical, structural and surface morph
✍
I. Jyothi; V. Rajagopal Reddy
📂
Article
📅
2010
🏛
Elsevier Science
🌐
English
⚖ 552 KB