𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effects of thermal annealing on the electrical and structural properties of Pt/Mo Schottky contacts on n-type GaN

✍ Scribed by Varra Rajagopal Reddy; M. Ravinandan; P. Koteswara Rao; Chel-Jong Choi


Publisher
Springer US
Year
2008
Tongue
English
Weight
665 KB
Volume
20
Category
Article
ISSN
0957-4522

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Structural and electrical properties of
✍ Jyothi, I. ;Reddy, V. Rajagopal ;Reddy, M. Siva Pratap ;Choi, Chel-Jong ;Bae, Jo 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 564 KB

## Abstract Thermal annealing effects on the electrical and structural properties of Ni/Mo Schottky contacts on n‐type GaN have been investigated by current–voltage (__I–V__), capacitance–voltage (__C–V__), Secondary ion mass spectrometer (SIMS), and X‐ray diffraction (XRD) techniques. The extracte

Rapid thermal annealing effects on elect
✍ Reddy, M. Bhaskar ;Janardhanam, V. ;Kumar, A. Ashok ;Reddy, V. Rajagopal ;Reddy, 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 491 KB

## Abstract The effects of rapid thermal annealing on the electrical and structural properties of Pd/Au Schottky contacts to n‐type InP(111) have been investigated by current–voltage (__I__ –__V__), capacitance–voltage (__C__ –__V__) and X‐ray diffraction (XRD) measurements. The barrier height of t

Electrical characteristics and interfaci
✍ Reddy, N. Nanda Kumar ;Reddy, V. Rajagopal ;Choi, C.-J. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 687 KB

## Abstract The electrical properties and interfacial reactions of Pt/Ru Schottky contacts on n‐type gallium nitride (GaN) have been investigated as a function of annealing temperature. The calculated Schottky barrier height (SBH) of the as‐deposited Pt/Ru Schottky contact is found to be 0.69 eV cu