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Investigation of the effects of porous layer on the electrical properties of Pt/n-GaN Schottky contacts

✍ Scribed by F.K. Yam; Z. Hassan


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
505 KB
Volume
403
Category
Article
ISSN
0921-4526

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The influence of growth pressure on the properties of p-GaN grown by metal-organic chemical vapor deposition method was investigated. The p-GaN layers were grown at low temperature under growth pressures ranging from 100 to 400 mbar. We find that higher growth pressure leads to lower Mg incorporatio