✦ LIBER ✦

Schottky barrier contacts on (p)-Ga0.47In0.53As

✍ Scribed by Ľ. Malacký; P. Kordoš; J. Novák

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 552 KB
Volume: 33
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(90)90166-c

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Schottky barrier measurements on p-type

Schottky barrier measurements on p-type In0.53Ga0.47As

✍ J.L. Veteran; D.P. Mullin; D.I. Elder 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 221 KB

Ohmic contacts on p-type Ga0.47In0.53As/

Ohmic contacts on p-type Ga0.47In0.53As/InP

✍ C.E. Allevato; J. Selders; F. Schulte; H. Beneking 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 636 KB

Quasi-Schottky barrier MSM-diode on n-Ga

Quasi-Schottky barrier MSM-diode on n-Ga0.47In0.53As using a depleted p+-Ga0.47In0.53As layer grown by LP-MOVPE

✍ S.V. Averin; A. Kohl; R. Müller; J. Wisser; K. Heime 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 504 KB

Electrical characteristics of an ion-imp

Electrical characteristics of an ion-implanted p-Ga0.47In0.53As MESFET at different Schottky barrier heights

✍ S.N. Chattopadhyay; Debjani Dutta; B.B. Pal 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 286 KB

Cd diffusion in In0.53Ga0.47As

✍ P. Ambrée; Dr. B. Gruska 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 462 KB

Diffusion experiments of Cd in VPE-InGaAs, lattice matched to InP, are reported. The closed ampoule technique used makes i t possible t o discuss the thermodynamics of the diffusion system consisting of the semiconductor samples, Cd,As, as compound source and additional In or GaAs powder t o prevent

Optical studies of In0.53Ga0.47As

✍ J.Y. Marzin; J.L. Benchimol; B. Sermage; B. Etienne; M. Voos 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 280 KB