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Quasi-Schottky barrier MSM-diode on n-Ga0.47In0.53As using a depleted p+-Ga0.47In0.53As layer grown by LP-MOVPE

✍ Scribed by S.V. Averin; A. Kohl; R. Müller; J. Wisser; K. Heime

No coin nor oath required. For personal study only.

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