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Scanning capacitance microscopy investigations of SiC structures

✍ Scribed by O. Bowallius; S. Anand; N. Nordell; G. Landgren; S. Karlsson

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
107 KB
Volume
4
Category
Article
ISSN
1369-8001

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We have used scanning capacitance microscopy to determine two-dimensional carrier distributions in 6H-SiC on both epitaxial layers and implanted samples. Measurements were carried out on cross-sections using metal-covered Si tips. The sample preparation, surface passivation and tip selection have be