Carrier concentration profiles in 6H-SiC by scanning capacitance microscopy

✍ Scribed by F. Giannazzo; P. Musumeci; L. Calcagno; A. Makhtari; V. Raineri

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 161 KB
• Volume: 4
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/s1369-8001(00)00129-3

✦ Synopsis

We have used scanning capacitance microscopy to determine two-dimensional carrier distributions in 6H-SiC on both epitaxial layers and implanted samples. Measurements were carried out on cross-sections using metal-covered Si tips. The sample preparation, surface passivation and tip selection have been investigated to obtain an optimised procedure. Implants were performed on p-type 6H-SiC at a substrate temperature of 5008C with N ions at different fluences. The defect profiles were determined by Rutherford backscattering spectrometry. The influence of the implanted damage on the measurements has been investigated by implanted Si-self ions.