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Scaling and strain dependence of nanoscale strained-Si p-MOSFET performance

✍ Scribed by Bufler, F.M.; Fichtner, W.


Book ID
114617266
Publisher
IEEE
Year
2003
Tongue
English
Weight
318 KB
Volume
50
Category
Article
ISSN
0018-9383

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High performance, uniaxially-strained, s
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The effect of uniaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and highfield transport on the drive current, off-state leakage and switching delay in nano-scale, Silicon (Si) and Germanium (Ge), p-MOS DGFETs is thoroughly and systematically investig