High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs

✍ Scribed by T. Krishnamohan; C. Jungemann; D. Kim; E. Ungersboeck; S. Selberherr; A.-T. Pham; B. Meinerzhagen; P. Wong; Y. Nishi; K.C. Saraswat

• Book ID: 104051749
• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 890 KB
• Volume: 84
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2007.04.085

✦ Synopsis

The effect of uniaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and highfield transport on the drive current, off-state leakage and switching delay in nano-scale, Silicon (Si) and Germanium (Ge), p-MOS DGFETs is thoroughly and systematically investigated. To accurately model and capture all these complex effects, different simulation techniques, such as the Non-local Empirical Pseudopotential method (bandstructure), Full-Band Monte-Carlo Simulations (transport), 1-D Poisson-Schrodinger (electrostatics) and detailed Band-To-Band-Tunneling (BTBT) (including bandstructure and quantum effects) simulations, were used in this study.