High-Performance Metal/High- n- and p-MOSFETs With Top-Cut Dual Stress Liners Using Gate-Last Damascene Process on (100) Substrates

✍ Scribed by Mayuzumi, S.; Yamakawa, S.; Tateshita, Y.; Hirano, T.; Nakata, M.; Yamaguchi, S.; Tai, K.; Wakabayashi, H.; Tsukamoto, M.; Nagashima, N.

• Book ID: 114619561
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 547 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2009.2014192