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[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - High Performance FDSOI MOSFETs and TFETs Using SiGe Channels and Raised Source and Drain

✍ Scribed by Le Royer, C.; Villalon, A.; Cooper, D.; Andrieu, F.; Hartmann, J.-M.; Perreau, P.; Previtali, B.

Book ID: 118183970
Publisher: IEEE
Year: 2012
Weight: 998 KB
Category: Article
ISBN: 1457718634
DOI: 10.1109/istdm.2012.6222480

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