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[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Electrical Characterization of P-Ge1-xSnx/P-Ge and P-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy

✍ Scribed by Baert, Bruno; Truong, Dao Y Nhi; Nakatsuka, Osamu; Zaima, Shigeaki; Nguyen, Ngoc Duy

No coin nor oath required. For personal study only.

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