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[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Two-Dimensional Analytical Model of Hetero Strained Ge/Strained Si TFET

✍ Scribed by Cui, Ning; Liang, Renrong; Wang, Jing; Xu, Jun

Book ID: 118216813
Publisher: IEEE
Year: 2012
Weight: 226 KB
Category: Article
ISBN: 1457718634
DOI: 10.1109/istdm.2012.6222412

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