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[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Si Tunneling Field Effect Transistor with Tunnelling In-Line with the Gate Field

✍ Scribed by Fischer, I. A.; Hahnel, D.; Isemann, H.; Kottantharayil, A.; Murali, G.; Oehme, M.; Schulze, J.

Book ID: 115515046
Publisher: IEEE
Year: 2012
Weight: 473 KB
Category: Article
ISBN: 1457718634
DOI: 10.1109/istdm.2012.6222411

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