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Studying the impact of carbon on device performance for strained-Si MOSFETs

✍ Scribed by M.H. Lee; S.T. Chang; C.-Y. Peng; B.-F. Hsieh; S. Maikap; S.-H. Liao

Book ID
108290188
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
570 KB
Volume
517
Category
Article
ISSN
0040-6090

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Impact of Ge content on the gate oxide r
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices
✍ Suresh Uppal; Mehdi Kanoun; John B. Varzgar; Sanatan Chattopadhyay; Sarah Olsen; πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 307 KB

In this paper we study the impact of the variation of Ge content on the gate oxide reliability of strained-Si/SiGe (s-Si/SiGe) MOS devices. MOS capacitors and n-MOSFET devices were fabricated on Si, and strained Si grown on SiGe virtual substrates with a Ge content of 10 and 30%. The devices had pol