✦ LIBER ✦

Sapphire substrate misorientation effects on GaN nucleation layer properties

✍ Scribed by D. Lu; D.I. Florescu; D.S. Lee; V. Merai; J.C. Ramer; A. Parekh; E.A. Armour

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Advanced characterization studies of sap

✍ Lu, D. ;Florescu, D. I. ;Lee, D. S. ;Merai, V. ;Parekh, A. ;Ramer, J. C. ;Guo, S 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 124 KB

Properties of GaN layers deposited on Al

✍ Prażmowska, J; Korbutowicz, R; Szyszka, A; Wośko, M; Serafińczuk, J; Paszkiewicz 📂 Article 📅 2009 🏛 Institute of Physics 🌐 English ⚖ 685 KB

Origin of Berreman effect in GaN layers

✍ Raman, R.; Mishra, Puspashree; Kapoor, Ashok Kumar; Muralidharan, R. 📂 Article 📅 2011 🏛 American Institute of Physics 🌐 English ⚖ 714 KB

The effect of substrate misorientation o

✍ P. A. Grudowski; A. L. Holmes; C. J. Eiting; R. D. Dupuis 📂 Article 📅 1997 🏛 Springer US 🌐 English ⚖ 660 KB

Thermal stress in GaN epitaxial layers g

✍ Kozawa, T.; Kachi, T.; Kano, H.; Nagase, H.; Koide, N.; Manabe, K. 📂 Article 📅 1995 🏛 American Institute of Physics 🌐 English ⚖ 667 KB

Effect of the parameters of sapphire sub

✍ Yu. N. Drozdov; N. V. Vostokov; D. M. Gaponova; V. M. Danil’tsev; M. N. Drozdov; 📂 Article 📅 2005 🏛 Springer 🌐 English ⚖ 108 KB