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Properties of GaN layers deposited on AlN/sapphire template substrates

✍ Scribed by Prażmowska, J; Korbutowicz, R; Szyszka, A; Wośko, M; Serafińczuk, J; Paszkiewicz, R; Podhorodecki, A; Misiewicz, J; Kovač, J; Srnanek, R; Tłaczała, M

Book ID
119945325
Publisher
Institute of Physics
Year
2009
Tongue
English
Weight
685 KB
Volume
146
Category
Article
ISSN
1742-6588

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Epitaxial lateral overgrowth of AlN laye
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## Abstract Epitaxial lateral overgrowth (ELO) of low‐dislocation‐density AlN layers on trench‐patterned sapphire substrates is demonstrated for the first time. Sapphire (0001) substrates with trench patterns formed along two different directions, 〈10$ 10 \bar 10 $0〉 and 〈11$ 11 \bar 20 $0〉, were u