✦ LIBER ✦

Rutile-type TiO2 thin film for high-k gate insulator

✍ Scribed by Masaru Kadoshima; Masahiko Hiratani; Yasuhiro Shimamoto; Kazuyoshi Torii; Hiroshi Miki; Shinichiro Kimura; Toshihide Nabatame

Book ID: 108388536
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 402 KB
Volume: 424
Category: Article
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(02)01105-7

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

HfO2 gate insulator formed by atomic lay

HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors

✍ S.-W. Jeong; H.J. Lee; K.S. Kim; M.T. You; Y. Roh; T. Noguchi; W. Xianyu; J. Jun 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 836 KB

A simple and low temperature process for

A simple and low temperature process for super-hydrophilic rutile TiO2 thin films growth

✍ R.S. Mane; Oh-Shim Joo; Sun-Ki Min; C.D. Lokhande; Sung-Hwan Han 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 481 KB

Investigation of Polysilazane-Based $\hb

Investigation of Polysilazane-Based $\hbox{SiO}_{2}$ Gate Insulator for Oxide Semiconductor Thin-Film Transistors

✍ Tu, Huynh Thi Cam; Inoue, Satoshi; Tue, Phan Trong; Miyasako, Takaaki; Shimoda, 📂 Article 📅 2013 🏛 IEEE 🌐 English ⚖ 626 KB

Investigation of strontium tantalate thi

Investigation of strontium tantalate thin films for high-k gate dielectric applications

✍ M. Silinskas; M. Lisker; B. Kalkofen; E.P. Burte 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 456 KB

Strontium tantalate (STO) films were grown by liquid-delivery (LD) metalorganic chemical vapor deposition (MOCVD) using Sr[Ta(OEt) 5 (OC 2 H 4 OMe)] 2 as precursor. The deposition of the films was investigated in dependence on process conditions, such as substrate temperature, pressure, and concentr

Low-Voltage, High-Performance Organic Fi

Low-Voltage, High-Performance Organic Field-Effect Transistors with an Ultra-Thin TiO2 Layer as Gate Insulator

✍ L. A. Majewski; R. Schroeder; M. Grell 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 481 KB 👁 2 views

Electrically Benign Dry-Etching Method f

Electrically Benign Dry-Etching Method for Rutile TiO[sub 2] Thin-Film Capacitors with Ru Electrodes

✍ Kim, Kyung Min; Lee, Sang Young; Choi, Gyu Jin; Han, Jeong Hwan; Hwang, Cheol Se 📂 Article 📅 2010 🏛 The Electrochemical Society 🌐 English ⚖ 328 KB