Investigation of Polysilazane-Based $\hbox{SiO}_{2}$ Gate Insulator for Oxide Semiconductor Thin-Film Transistors

✍ Scribed by Tu, Huynh Thi Cam; Inoue, Satoshi; Tue, Phan Trong; Miyasako, Takaaki; Shimoda, Tatsuya

• Book ID: 124087116
• Publisher: IEEE
• Year: 2013
• Tongue: English
• Weight: 626 KB
• Volume: 60
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/TED.2013.2241440