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Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates

✍ Scribed by V. A. Odnoblyudov; A. Yu. Egorov; N. V. Kryzhanovskaya; A. G. Gladyshev; V. V. Mamutin; A. F. Tsatsul’nikov; V. M. Ustinov

Book ID
110133074
Publisher
SP MAIK Nauka/Interperiodica
Year
2002
Tongue
English
Weight
46 KB
Volume
28
Category
Article
ISSN
1063-7850

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Near 1.3 μm Emission at Room Temperature
Near 1.3 μm Emission at Room Temperature from InAsSb/GaAs Self-Assembled Quantum Dots on GaAs Substrates
✍ K. Suzuki; Y. Arakawa 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 103 KB

We observed for the first time clear emission near 1.3 mm at room temperature from InAs 0:9 Sb 0:1 self-assembled quantum dots on GaAs substrates. InAs 0:9 Sb 0:1 quantum dots were grown by molecular beam epitaxy using Stranski-Krastanov growth mode, for application to emission at 1.3 mm lasers. The