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The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm

✍ Scribed by N. V. Kryzhanovskaya; A. Yu. Egorov; V. V. Mamutin; N. K. Polyakov; A. F. Tsatsul’nikov; A. R. Kovsh; N. N. Ledentsov; V. M. Ustinov; D. Bimberg

Book ID: 110143151
Publisher: Springer
Year: 2005
Tongue: English
Weight: 88 KB
Volume: 39
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1944862

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