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Room temperature λ=1.3 µm photoluminescence from InGaAs quantum dots on (001) Si substrate

✍ Scribed by T. M. Burbaev; I. P. Kazakov; V. A. Kurbatov; M. M. Rzaev; V. A. Tsvetkov; V. I. Tsekhosh


Book ID
110131244
Publisher
Springer
Year
2002
Tongue
English
Weight
172 KB
Volume
36
Category
Article
ISSN
1063-7826

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Near 1.3 μm Emission at Room Temperature
✍ K. Suzuki; Y. Arakawa 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 103 KB

We observed for the first time clear emission near 1.3 mm at room temperature from InAs 0:9 Sb 0:1 self-assembled quantum dots on GaAs substrates. InAs 0:9 Sb 0:1 quantum dots were grown by molecular beam epitaxy using Stranski-Krastanov growth mode, for application to emission at 1.3 mm lasers. The