High-On/Off-Ratio Graphene Nanoconstrict
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Ye Lu; Brett Goldsmith; Douglas R. Strachan; Jong Hsien Lim; Zhengtang Luo; A. T
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Article
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2010
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John Wiley and Sons
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English
β 850 KB
## Abstract A method is reported to pattern monolayer graphene nanoconstriction fieldβeffect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedbackβcontrolled electromigration (FCE) to form a constriction in a gold etch mask that is first patt