Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors
β Scribed by Basu, D.; Gilbert, M. J.; Register, L. F.; Banerjee, S. K.; MacDonald, A. H.
- Book ID
- 120423532
- Publisher
- American Institute of Physics
- Year
- 2008
- Tongue
- English
- Weight
- 703 KB
- Volume
- 92
- Category
- Article
- ISSN
- 0003-6951
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π SIMILAR VOLUMES
We investigate experimentally the isolation edge shape effects on the short channel characteristics, i.e. the gate length dependence, of metal oxide semiconductor field effect transistors (MOSFETs) for various isolation structures, as compared with a reference MOSFET without influence of the isolati
## Abstract Silicon carbide is the only compound semiconductor with silicon dioxide as its native oxide and can form metalβoxideβsemiconductor fieldβeffect transistors. In this article, we review the inversion layer electron transport properties of 4HβSiC/SiO~2~. The inversion layer electron transp