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Bis(dithienothiophene) organic field-effect transistors with a high ON/OFF ratio

✍ Scribed by Sirringhaus, H.; Friend, R. H.; Li, X. C.; Moratti, S. C.; Holmes, A. B.; Feeder, N.


Book ID
120552975
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
350 KB
Volume
71
Category
Article
ISSN
0003-6951

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## Abstract A method is reported to pattern monolayer graphene nanoconstriction field‐effect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedback‐controlled electromigration (FCE) to form a constriction in a gold etch mask that is first patt