## Abstract A method is reported to pattern monolayer graphene nanoconstriction fieldβeffect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedbackβcontrolled electromigration (FCE) to form a constriction in a gold etch mask that is first patt
β¦ LIBER β¦
High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants
β Scribed by Szafranek, B. N.; Schall, D.; Otto, M.; Neumaier, D.; Kurz, H.
- Book ID
- 120024833
- Publisher
- American Chemical Society
- Year
- 2011
- Tongue
- English
- Weight
- 752 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1530-6984
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