𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Role of Surface Diffusion in Chemical Beam Epitaxy of InAs Nanowires

✍ Scribed by Jensen, Linus E.; Björk, Mikael T.; Jeppesen, Sören; Persson, Ann I.; Ohlsson, B. Jonas; Samuelson, Lars


Book ID
115523905
Publisher
American Chemical Society
Year
2004
Tongue
English
Weight
265 KB
Volume
4
Category
Article
ISSN
1530-6984

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Growth mechanism of InAs–InSb heterostru
✍ Lorenzo Lugani; Daniele Ercolani; Fabio Beltram; Lucia Sorba 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 304 KB

We report on the particle diameter dependence of the growth rate of the InSb segment of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy. The analysis of the growth rate reveals that the growth is limited by the Gibbs-Thomson effect and the effect of NW lateral dimensions on the n

Growth rate enhancement of InAs nanowire
✍ J. Bubesh Babu; Kanji Yoh 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 915 KB

Surface diffusion kinetics plays a major role in the growth of III-V nanowires by the molecular beam epitaxial (MBE) technique. As/In flux is one of the key factors in determining the diffusion length, which eventually affect the growth rate, morphology and length of the InAs nanowire. To identify a