We report on the particle diameter dependence of the growth rate of the InSb segment of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy. The analysis of the growth rate reveals that the growth is limited by the Gibbs-Thomson effect and the effect of NW lateral dimensions on the n
✦ LIBER ✦
Role of Surface Diffusion in Chemical Beam Epitaxy of InAs Nanowires
✍ Scribed by Jensen, Linus E.; Björk, Mikael T.; Jeppesen, Sören; Persson, Ann I.; Ohlsson, B. Jonas; Samuelson, Lars
- Book ID
- 115523905
- Publisher
- American Chemical Society
- Year
- 2004
- Tongue
- English
- Weight
- 265 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1530-6984
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