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Modeling of InAs–InSb nanowires grown by Au-assisted chemical beam epitaxy

✍ Scribed by Lugani, L; Ercolani, D; Sorba, L; Sibirev, N V; Timofeeva, M A; Dubrovskii, V G

Book ID
121376203
Publisher
Institute of Physics
Year
2012
Tongue
English
Weight
736 KB
Volume
23
Category
Article
ISSN
0957-4484

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Growth mechanism of InAs–InSb heterostru
Growth mechanism of InAs–InSb heterostructured nanowires grown by chemical beam epitaxy
✍ Lorenzo Lugani; Daniele Ercolani; Fabio Beltram; Lucia Sorba 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 304 KB

We report on the particle diameter dependence of the growth rate of the InSb segment of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy. The analysis of the growth rate reveals that the growth is limited by the Gibbs-Thomson effect and the effect of NW lateral dimensions on the n