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Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy

โœ Scribed by Dheeraj, D.L.; Munshi, A.M.; Christoffersen, O.M.; Kim, D.C.; Signorello, G.; Riel, H.; van Helvoort, A.T.J.; Weman, H.; Fimland, B.O.

Book ID
121978132
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
951 KB
Volume
378
Category
Article
ISSN
0022-0248

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โœ Soo-Ghang Ihn; Mee-Yi Ryu; Jong-In Song ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 881 KB

The photoluminescence (PL) of undoped, Si-doped, and Be-doped GaAs nanowires (NWs) grown on Si substrates by molecular beam epitaxy was investigated. PL peaks of the undoped and Be-doped NWs were observed at higher energies than the bandgap energy of GaAs bulk. According to X-ray diffraction analysi