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Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

✍ Scribed by Thelander, Claes; Caroff, Philippe; Plissard, Sébastien; Dick, Kimberly A.


Book ID
121306438
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
1003 KB
Volume
100
Category
Article
ISSN
0003-6951

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Growth mechanism of InAs–InSb heterostru
✍ Lorenzo Lugani; Daniele Ercolani; Fabio Beltram; Lucia Sorba 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 304 KB

We report on the particle diameter dependence of the growth rate of the InSb segment of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy. The analysis of the growth rate reveals that the growth is limited by the Gibbs-Thomson effect and the effect of NW lateral dimensions on the n